P057AAT Datasheet. Specs and Replacement

Type Designator: P057AAT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 129 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1090 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO220

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P057AAT datasheet

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P057AAT

P057AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75V 5.8m @VGS = 10V 129A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 129 ID Continuous Drain Current1 TC = 100 C 82 A IDM 410 Pulsed Drain Current2 IAS Avalanche Current 60 ... See More ⇒

Detailed specifications: P0550AT, P0550ATF, P0550BD, P0550BT, P0550ED, P0550EI, P0550ETF, P0550ETFS, 5N65, PZC502FYB, PZD502CMA, PZD502CYB, PT530BA, PT542BA, PD632BA, PD636BA, PD648BA

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