All MOSFET. P057AAT Datasheet

 

P057AAT Datasheet and Replacement


   Type Designator: P057AAT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 129 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1090 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220
 

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P057AAT Datasheet (PDF)

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P057AAT

P057AATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID75V 5.8m @VGS = 10V 129ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C129IDContinuous Drain Current1TC = 100 C82AIDM410Pulsed Drain Current2IASAvalanche Current 60

Datasheet: P0550AT , P0550ATF , P0550BD , P0550BT , P0550ED , P0550EI , P0550ETF , P0550ETFS , 4N60 , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA .

History: IXFM10N90

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