P057AAT Spec and Replacement
Type Designator: P057AAT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 129 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 1090 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO220
P057AAT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P057AAT Specs
p057aat.pdf
P057AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75V 5.8m @VGS = 10V 129A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 129 ID Continuous Drain Current1 TC = 100 C 82 A IDM 410 Pulsed Drain Current2 IAS Avalanche Current 60 ... See More ⇒
Detailed specifications: P0550AT , P0550ATF , P0550BD , P0550BT , P0550ED , P0550EI , P0550ETF , P0550ETFS , 12N60 , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA .
History: 2N4859
Keywords - P057AAT MOSFET specs
P057AAT cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2N4859
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