All MOSFET. P057AAT Datasheet

 

P057AAT MOSFET. Datasheet pdf. Equivalent

Type Designator: P057AAT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 192 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 129 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 1090 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm

Package: TO220

P057AAT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P057AAT Datasheet (PDF)

0.1. p057aat.pdf Size:318K _unikc

P057AAT
P057AAT

P057AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75V 5.8mΩ @VGS = 10V 129A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TC = 25 ° C 129 ID Continuous Drain Current1 TC = 100 ° C 82 A IDM 410 Pulsed Drain Current2 IAS Avalanche Current 60

Datasheet: P0550AT , P0550ATF , P0550BD , P0550BT , P0550ED , P0550EI , P0550ETF , P0550ETFS , IRF1405 , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA .

 

 
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