P0604BD Specs and Replacement
Type Designator: P0604BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 378 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO252
P0604BD substitution
P0604BD datasheet
p0604bd.pdf
P0604BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 7m @VGS = 10V 64A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 64 ID Continuous Drain Current TC = 100 C 40 A IDM 150 Pulsed Drain Current1 ... See More ⇒
tp0604.pdf
Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (95pF typical) combination produces a dev... See More ⇒
Detailed specifications: P0603BDD , P0603BDF , P0603BDG , P0603BDL , P0603BEAD , P0603BK , P0603BT , P0603BV , EMB04N03H , P0610BTF , P062ABD8 , P062ABDD , P062ABDF , P0660AS , P0660AT , P0660ATF , P0690ATF .
History: DMP3065LVT | DH060N03R | AGM302D1 | TK8P60W5 | AFP1413 | UK3019 | AGM16N10C
Keywords - P0604BD MOSFET specs
P0604BD cross reference
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P0604BD substitution
P0604BD replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: DMP3065LVT | DH060N03R | AGM302D1 | TK8P60W5 | AFP1413 | UK3019 | AGM16N10C
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