P0604BD Datasheet. Specs and Replacement

Type Designator: P0604BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 378 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO252

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P0604BD datasheet

 ..1. Size:463K  unikc
 p0604bd.pdf pdf_icon

P0604BD

P0604BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 7m @VGS = 10V 64A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 64 ID Continuous Drain Current TC = 100 C 40 A IDM 150 Pulsed Drain Current1 ... See More ⇒

 9.1. Size:627K  supertex
 tp0604.pdf pdf_icon

P0604BD

Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (95pF typical) combination produces a dev... See More ⇒

Detailed specifications: P0603BDD, P0603BDF, P0603BDG, P0603BDL, P0603BEAD, P0603BK, P0603BT, P0603BV, AO4407, P0610BTF, P062ABD8, P062ABDD, P062ABDF, P0660AS, P0660AT, P0660ATF, P0690ATF

Keywords - P0604BD MOSFET specs

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