All MOSFET. P0604BD Datasheet

 

P0604BD Datasheet and Replacement


   Type Designator: P0604BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 378 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252
 

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P0604BD Datasheet (PDF)

 ..1. Size:463K  unikc
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P0604BD

P0604BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID40V 7m @VGS = 10V 64ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C64IDContinuous Drain CurrentTC = 100 C40AIDM150Pulsed Drain Current1

 9.1. Size:627K  supertex
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P0604BD

Supertex inc. TP0604P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance (95pF typical)combination produces a dev

Datasheet: P0603BDD , P0603BDF , P0603BDG , P0603BDL , P0603BEAD , P0603BK , P0603BT , P0603BV , 2SK3918 , P0610BTF , P062ABD8 , P062ABDD , P062ABDF , P0660AS , P0660AT , P0660ATF , P0690ATF .

History: KP744V | SUM09N20-270 | SWP035R10E6S | SWP056R68E7T | NCEAP60ND30AG | SI2347DS | IRFH4234

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