All MOSFET. P0780ATF Datasheet

 

P0780ATF MOSFET. Datasheet pdf. Equivalent


   Type Designator: P0780ATF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.94 Ohm
   Package: TO220F

 P0780ATF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0780ATF Datasheet (PDF)

 0.1. Size:543K  unikc
 p0780atf-s.pdf

P0780ATF P0780ATF

P0780ATF/P0780ATFSN-Channel High Voltage Mode Field Effect TransistorPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.94 @VGS = 10V800V 7ATO-220FTO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 800VVGSGate-Source Voltage 30TC = 25 C7IDContinuous Drain Current2TC = 100

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK6207-55C

 

 
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