P0803BVG Datasheet. Specs and Replacement
Type Designator: P0803BVG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP8
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P0803BVG substitution
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P0803BVG datasheet
p0803bvg.pdf
P0803BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 8m @VGS = 10V 13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 13 ID Continuous Drain Current TA = 70 C 8 A IDM 50 Pulsed Drain Current1 IAS Avalanche Current 50 EAS ... See More ⇒
p0803bdg.pdf
P0803BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.2m @VGS = 10V 30V 60A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 60 ID Continuous Drain Current TC= 100 C 38 A IDM 120 Pulsed Drain Current1... See More ⇒
ap0803gmt-hf.pdf
AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des... See More ⇒
Detailed specifications: P0765GTFS, P0770EI, P0770EIS, P0770ETF, P0770ETFS, P0780ATF, P0780ATFS, P0803BDG, 7N65, P0804BD, P0804BD8, P0804BK, P0804BVG, P0903BEA, P0903BIS, P0903BK, P0903BKA
Keywords - P0803BVG MOSFET specs
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