P092ABD Datasheet. Specs and Replacement

Type Designator: P092ABD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 277 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO252

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P092ABD datasheet

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P092ABD

P092ABD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 10V 25V 63A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 63 ID Continuous Drain Current2 TC= 100 C 40 A IDM 180 Pulsed Drain Current1... See More ⇒

Detailed specifications: P0910ATF, P0910ATG, P0920AD, P0920AT, P0920ATF, P0920BD, P0925AD, P0925BTF, 4435, P0950ETF, P0950ETFS, P0990AU, P1003BDF, P1003BK, P1003EK, P1003EVG, P1004BD

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