All MOSFET. P092ABD Datasheet

 

P092ABD Datasheet and Replacement


   Type Designator: P092ABD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 277 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252
 

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P092ABD Datasheet (PDF)

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P092ABD

P092ABDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 10V25V 63ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC= 25 C63IDContinuous Drain Current2TC= 100 C40AIDM180Pulsed Drain Current1

Datasheet: P0910ATF , P0910ATG , P0920AD , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF , IRLB4132 , P0950ETF , P0950ETFS , P0990AU , P1003BDF , P1003BK , P1003EK , P1003EVG , P1004BD .

History: IRF3704L | IXTT40N50L2 | RFG60P05E | TPCA8027-H | PD1503YVS-A | SSF2610E | AOB66935L

Keywords - P092ABD MOSFET datasheet

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