P106AAT Datasheet and Replacement
Type Designator: P106AAT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 351 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220
P106AAT substitution
P106AAT Datasheet (PDF)
p106aat.pdf

P106AATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID65V 10m @VGS = 10V 74ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 65VVGSGate-Source Voltage 20TC = 25 C74IDContinuous Drain Current2TC = 100 C38AIDM180Pulsed Drain Current1
fdfs2p106a.pdf

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif
Datasheet: P1006BTFS , P1060AT , P1060ATF , P1060ATFS , P1060ETF , P1060ETFS , P1065AT , P1065ATF , IRFB31N20D , P1070ATF , P1070ATFS , P1103BEA , P1103BVG , P117AATX , P1203BD , P1203BEA , P1203BKA .
History: QM6204S | DMP21D5UFB4 | P1065ATF | IXTP2N100P | CS7416 | SQ1431EH | SPB11N60S5
Keywords - P106AAT MOSFET datasheet
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History: QM6204S | DMP21D5UFB4 | P1065ATF | IXTP2N100P | CS7416 | SQ1431EH | SPB11N60S5



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