P106AAT Datasheet. Specs and Replacement

Type Designator: P106AAT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 74 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 351 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO220

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P106AAT datasheet

 ..1. Size:323K  unikc
 p106aat.pdf pdf_icon

P106AAT

P106AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 65V 10m @VGS = 10V 74A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 65 V VGS Gate-Source Voltage 20 TC = 25 C 74 ID Continuous Drain Current2 TC = 100 C 38 A IDM 180 Pulsed Drain Current1... See More ⇒

 9.1. Size:88K  fairchild semi
 fdfs2p106a.pdf pdf_icon

P106AAT

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif... See More ⇒

Detailed specifications: P1006BTFS, P1060AT, P1060ATF, P1060ATFS, P1060ETF, P1060ETFS, P1065AT, P1065ATF, SKD502T, P1070ATF, P1070ATFS, P1103BEA, P1103BVG, P117AATX, P1203BD, P1203BEA, P1203BKA

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