All MOSFET. P106AAT Datasheet

 

P106AAT Datasheet and Replacement


   Type Designator: P106AAT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 351 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

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P106AAT Datasheet (PDF)

 ..1. Size:323K  unikc
 p106aat.pdf pdf_icon

P106AAT

P106AATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID65V 10m @VGS = 10V 74ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 65VVGSGate-Source Voltage 20TC = 25 C74IDContinuous Drain Current2TC = 100 C38AIDM180Pulsed Drain Current1

 9.1. Size:88K  fairchild semi
 fdfs2p106a.pdf pdf_icon

P106AAT

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif

Datasheet: P1006BTFS , P1060AT , P1060ATF , P1060ATFS , P1060ETF , P1060ETFS , P1065AT , P1065ATF , K2611 , P1070ATF , P1070ATFS , P1103BEA , P1103BVG , P117AATX , P1203BD , P1203BEA , P1203BKA .

History: IPD100N04S4-02 | HTD070N04 | LBSS84LT1G | UTT6NP10G-S08-R | SIA537EDJ | CSD13306W | QM2N7002E3K1

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