P1070ATF Datasheet. Specs and Replacement

Type Designator: P1070ATF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 57 nC

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220F

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P1070ATF datasheet

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P1070ATF

P1070ATF / P1070ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.85 @VGS = 10V 700V 10A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 ... See More ⇒

Detailed specifications: P1060AT, P1060ATF, P1060ATFS, P1060ETF, P1060ETFS, P1065AT, P1065ATF, P106AAT, MMIS60R580P, P1070ATFS, P1103BEA, P1103BVG, P117AATX, P1203BD, P1203BEA, P1203BKA, P1203BV

Keywords - P1070ATF MOSFET specs

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