P117AATX Datasheet. Specs and Replacement
Type Designator: P117AATX 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 917 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO220
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P117AATX substitution
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P117AATX datasheet
p117aatx.pdf
P117AATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75V 11m @VGS = 10V 80A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage 20 TC = 25 C 80 ID Continuous Drain Current1 TC = 100 C 70 A IDM 320 Pulsed Drain Current... See More ⇒
Detailed specifications: P1060ETFS, P1065AT, P1065ATF, P106AAT, P1070ATF, P1070ATFS, P1103BEA, P1103BVG, 2N60, P1203BD, P1203BEA, P1203BKA, P1203BV, P1203ED, P1203EEA, P1203EK, P1203EV
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