All MOSFET. P117AATX Datasheet

 

P117AATX MOSFET. Datasheet pdf. Equivalent


   Type Designator: P117AATX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 75 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 80 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 90 nC
   Rise Time (tr): 100 nS
   Drain-Source Capacitance (Cd): 917 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
   Package: TO220

 P117AATX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P117AATX Datasheet (PDF)

 ..1. Size:606K  unikc
 p117aatx.pdf

P117AATX P117AATX

P117AATXN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID75V 11m @VGS = 10V 80ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 75VVGSGate-Source Voltage 20TC = 25 C80IDContinuous Drain Current1TC = 100 C70AIDM320Pulsed Drain Current

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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