P1210BK MOSFET. Datasheet pdf. Equivalent
Type Designator: P1210BK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 153 nC
trⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 338 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5X6P
P1210BK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P1210BK Datasheet (PDF)
p1210bk.pdf
P1210BKN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = 10V100V 40APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 20 VTC = 25 C40IDContinuous Drain CurrentTC = 100 C26IDM110Pulsed Drain Curren
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTJ3N150 | AP65SL600DH | HM2301F
History: IXTJ3N150 | AP65SL600DH | HM2301F
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918