P1212AT Datasheet and Replacement
Type Designator: P1212AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 128 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 831 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220
P1212AT substitution
P1212AT Datasheet (PDF)
p1212at.pdf

P1212ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = 10V120V 75ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C75IDContinuous Drain CurrentTC = 100 C47AIDM300Pulsed Drain Current1IASAvalanche Current 55E
ncep1212as.pdf

Pb Free Producthttp://www.ncepower.com NCEP1212ASNCE N-Channel Super Trench Power MOSFET Description The NCEP1212AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Datasheet: P1203BKA , P1203BV , P1203ED , P1203EEA , P1203EK , P1203EV , P1203EVG , P1210BK , 2SK3918 , P1260AT , P1260ATF , P1308AK , P1308ATFG , P1308ATG , P1350AT , P1350ATF , P1350ATFS .
Keywords - P1212AT MOSFET datasheet
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