All MOSFET. P1212AT Datasheet

 

P1212AT Datasheet and Replacement


   Type Designator: P1212AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 128 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 831 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 
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P1212AT Datasheet (PDF)

 ..1. Size:592K  unikc
 p1212at.pdf pdf_icon

P1212AT

P1212ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = 10V120V 75ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C75IDContinuous Drain CurrentTC = 100 C47AIDM300Pulsed Drain Current1IASAvalanche Current 55E

 8.1. Size:427K  ncepower
 ncep1212as.pdf pdf_icon

P1212AT

Pb Free Producthttp://www.ncepower.com NCEP1212ASNCE N-Channel Super Trench Power MOSFET Description The NCEP1212AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Datasheet: P1203BKA , P1203BV , P1203ED , P1203EEA , P1203EK , P1203EV , P1203EVG , P1210BK , 2SK3918 , P1260AT , P1260ATF , P1308AK , P1308ATFG , P1308ATG , P1350AT , P1350ATF , P1350ATFS .

History: RFL1N10L | STI22NM60N

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