P1606BD Datasheet. Specs and Replacement

Type Designator: P1606BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 55 nC

tr ⓘ - Rise Time: 99 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm

Package: TO252

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P1606BD datasheet

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P1606BD

P1606BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 18.5m @VGS = 10V 60V 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 42 ID Continuous Drain Current2 TC = 100 C 26 A IDM 110 Pulsed Drain Current1,2 IAS Avalanche Current 4... See More ⇒

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P1606BD

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P1606BD

VBP1606 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.007 100 % Rg and UIS tested ID (A) 150 Configuration Single Package TO-247 D TO-247AC G S D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER S... See More ⇒

Detailed specifications: P1603BEB, P1603BEBA, P1603BEBB, P1603BV, P1603BVA, P1604ED, P1604ET, P1604ETF, AO3400, P1610AD, P1610AT, P1703BDG, P2610ADG, P2610AI, P2610ATFG, P2610ATG, P2610BD

Keywords - P1606BD MOSFET specs

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