All MOSFET. P1606BD Datasheet

 

P1606BD Datasheet and Replacement


   Type Designator: P1606BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
   Package: TO252
 
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P1606BD Datasheet (PDF)

 ..1. Size:902K  unikc
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P1606BD

P1606BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID18.5m @VGS = 10V60V 42ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C42IDContinuous Drain Current2TC = 100 C26AIDM110Pulsed Drain Current1,2IASAvalanche Current 4

 9.1. Size:871K  cn vbsemi
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P1606BD

VBP1606www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.007 100 % Rg and UIS testedID (A) 150Configuration SinglePackage TO-247DTO-247ACGSDGN-Channel MOSFET SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER S

Datasheet: P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF , IRFB4115 , P1610AD , P1610AT , P1703BDG , P2610ADG , P2610AI , P2610ATFG , P2610ATG , P2610BD .

Keywords - P1606BD MOSFET datasheet

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