P1606BD PDF Specs and Replacement
Type Designator: P1606BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 99 nS
Cossⓘ - Output Capacitance: 178 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
Package: TO252
P1606BD substitution
P1606BD PDF Specs
p1606bd.pdf
P1606BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 18.5m @VGS = 10V 60V 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 42 ID Continuous Drain Current2 TC = 100 C 26 A IDM 110 Pulsed Drain Current1,2 IAS Avalanche Current 4... See More ⇒
vbp1606.pdf
VBP1606 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.007 100 % Rg and UIS tested ID (A) 150 Configuration Single Package TO-247 D TO-247AC G S D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER S... See More ⇒
Detailed specifications: P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF , P55NF06 , P1610AD , P1610AT , P1703BDG , P2610ADG , P2610AI , P2610ATFG , P2610ATG , P2610BD .
Keywords - P1606BD MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
