All MOSFET. IRF054 Datasheet

 

IRF054 Datasheet and Replacement


   Type Designator: IRF054
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180(max) nC
   trⓘ - Rise Time: 180(max) nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO3
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IRF054 Datasheet (PDF)

 ..1. Size:146K  international rectifier
 irf054.pdf pdf_icon

IRF054

PD - 90640REPETITIVE AVALANCHE AND dv/dt RATED IRF05460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product SummaryPart Number BVDSS RDS(on) IDIRF054 60V 0.022 45A*The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ac

 0.1. Size:22K  semelab
 irf054smd.pdf pdf_icon

IRF054

IRF054SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

Datasheet: IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , 2SK3568 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 .

History: IRF1010EL

Keywords - IRF054 MOSFET datasheet

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