IRF054 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF054
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 180(max) nC
Rise Time (tr): 180(max) nS
Drain-Source Capacitance (Cd): 2000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TO3
IRF054 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF054 Datasheet (PDF)
..1. irf054.pdf Size:146K _international_rectifier
PD - 90640REPETITIVE AVALANCHE AND dv/dt RATED IRF05460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product SummaryPart Number BVDSS RDS(on) IDIRF054 60V 0.022 45A*The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ac
0.1. irf054smd.pdf Size:22K _semelab
IRF054SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
Datasheet: IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , FDP8896 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 .



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