IRF054 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF054
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 180(max) nC
Rise Time (tr): 180(max) nS
Drain-Source Capacitance (Cd): 2000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TO3
IRF054 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF054 Datasheet (PDF)
irf054.pdf
PD - 90640REPETITIVE AVALANCHE AND dv/dt RATED IRF05460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product SummaryPart Number BVDSS RDS(on) IDIRF054 60V 0.022 45A*The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ac
irf054smd.pdf
IRF054SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
Datasheet: IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , 4N60 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 .
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