IRF054 Datasheet. Specs and Replacement

Type Designator: IRF054  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 max nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO3

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IRF054 datasheet

 ..1. Size:146K  international rectifier
 irf054.pdf pdf_icon

IRF054

PD - 90640 REPETITIVE AVALANCHE AND dv/dt RATED IRF054 60V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF054 60V 0.022 45A* The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design ac... See More ⇒

 0.1. Size:22K  semelab
 irf054smd.pdf pdf_icon

IRF054

IRF054SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS ... See More ⇒

Detailed specifications: IRCP350, IRCP440, IRCP450, IRCZ14, IRCZ245, IRCZ345, IRCZ445, IRF044, 2SK3568, IRF1010E, IRF1010EL, IRF1010ES, IRF1010N, IRF1010NL, IRF1010NS, IRF1104, IRF130

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