All MOSFET. IRF054 Datasheet

 

IRF054 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF054

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180 nC

Drain-Source Capacitance (Cd): 4600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO3

IRF054 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF054 Datasheet (PDF)

0.1. irf054.pdf Size:146K _international_rectifier

IRF054
IRF054

PD - 90640 REPETITIVE AVALANCHE AND dv/dt RATED IRF054 60V, N-CHANNEL HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF054 60V 0.022Ω 45A* The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design ac

0.2. irf054smd.pdf Size:22K _semelab

IRF054
IRF054

IRF054SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

 

Datasheet: IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF9540 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 .

 

 
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