All MOSFET. IRF054 Datasheet

 

IRF054 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF054

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180(max) nC

Rise Time (tr): 180(max) nS

Drain-Source Capacitance (Cd): 2000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: TO3

IRF054 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF054 Datasheet (PDF)

 ..1. Size:146K  international rectifier
irf054.pdf

IRF054
IRF054

PD - 90640REPETITIVE AVALANCHE AND dv/dt RATED IRF05460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product SummaryPart Number BVDSS RDS(on) IDIRF054 60V 0.022 45A*The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ac

 0.1. Size:22K  semelab
irf054smd.pdf

IRF054
IRF054

IRF054SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

Datasheet: IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , 4N60 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 .

 

 
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