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IRF054 Specs and Replacement


   Type Designator: IRF054
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 180(max) nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO3
 

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IRF054 Specs

 ..1. Size:146K  international rectifier
 irf054.pdf pdf_icon

IRF054

PD - 90640 REPETITIVE AVALANCHE AND dv/dt RATED IRF054 60V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF054 60V 0.022 45A* The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design ac... See More ⇒

 0.1. Size:22K  semelab
 irf054smd.pdf pdf_icon

IRF054

IRF054SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS ... See More ⇒

Detailed specifications: IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , K3569 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 .

History: FRE260D | HM4264

Keywords - IRF054 MOSFET specs

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