PZ513BA MOSFET. Datasheet pdf. Equivalent
Type Designator: PZ513BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 1.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: SOT323
PZ513BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PZ513BA Datasheet (PDF)
pz513ba.pdf
PZ513BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID115m @VGS = -4.5V -20V -1.3ASOT-323ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 8TA = 25 C-1.3IDContinuous Drain CurrentTA = 70 AC-1IDM-10Pulsed Drain
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK2701 | IXTD110N25T-8W
History: 2SK2701 | IXTD110N25T-8W
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