All MOSFET. PZ558EZ Datasheet

 

PZ558EZ Datasheet and Replacement


   Type Designator: PZ558EZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 0.24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT363
 

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PZ558EZ Datasheet (PDF)

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PZ558EZ

PZ558EZDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3 @VGS = 4V30V 0.2ASOT-363ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 16 VTA = 25 C0.24IDAContinuous Drain Current1TA = 70 C0.17IDM0.7 APulsed Drain Current2TA = 25 C0.29

Datasheet: PZ2503HV , PZ2806HV , PZ2N7002M , PZ3304QV , PZ509BA , PZ513BA , PZ5203EMA , PZ5203QV , 2SK3568 , PE6B0SA , PF610BC , PF610BL , PF610HV , PI506BZ , PI632BZ , PJ614DA , PC015BD .

History: SI1013CX | IRF644NPBF | IPA60R800CE | AOB10T60P | AP4451GH-HF | FQL50N40 | ET6300

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