All MOSFET. PZ558EZ Datasheet

 

PZ558EZ MOSFET. Datasheet pdf. Equivalent

Type Designator: PZ558EZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.29 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Drain Current |Id|: 0.24 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 17 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: SOT363

PZ558EZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZ558EZ Datasheet (PDF)

0.1. pz558ez.pdf Size:757K _unikc

PZ558EZ
PZ558EZ

PZ558EZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3Ω @VGS = 4V 30V 0.2A SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±16 V TA = 25 ° C 0.24 ID A Continuous Drain Current1 TA = 70 ° C 0.17 IDM 0.7 A Pulsed Drain Current2 TA = 25 ° C 0.29

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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