All MOSFET. PV501BA Datasheet

 

PV501BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PV501BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 426 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8

 PV501BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PV501BA Datasheet (PDF)

 ..1. Size:788K  unikc
 pv501ba.pdf

PV501BA PV501BA

PV501BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7.5m @VGS = -10V -30V -12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-12IDContinuous Drain CurrentTA = 70 C-9.6AIDM-50Pulsed Drain

 ..2. Size:260K  niko-sem
 pv501ba.pdf

PV501BA PV501BA

P-Channel Logic Level Enhancement Mode PV501BANIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m -12A -30V DGFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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