PV501BA PDF Specs and Replacement
Type Designator: PV501BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 426 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP8
PV501BA substitution
PV501BA PDF Specs
pv501ba.pdf
PV501BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m @VGS = -10V -30V -12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -12 ID Continuous Drain Current TA = 70 C -9.6 A IDM -50 Pulsed Drain... See More ⇒
pv501ba.pdf
P-Channel Logic Level Enhancement Mode PV501BA NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m -12A -30V D G Features Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒
Detailed specifications: P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , P55NF06 , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA .
History: SL60N10Q
Keywords - PV501BA MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SL60N10Q
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MOSFET: AP50N04Q | AP50N04K | AP50N04GD
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