PV501BA MOSFET. Datasheet pdf. Equivalent
Type Designator: PV501BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 426 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: SOP8
PV501BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PV501BA Datasheet (PDF)
0.1. pv501ba.pdf 
Size:788K _unikc
PV501BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5mΩ @VGS = -10V -30V -12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -12 ID Continuous Drain Current TA = 70 ° C -9.6 A IDM -50 Pulsed Drain
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
