All MOSFET. PV501BA Datasheet

 

PV501BA Datasheet and Replacement


   Type Designator: PV501BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 426 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8
 

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PV501BA Datasheet (PDF)

 ..1. Size:788K  unikc
 pv501ba.pdf pdf_icon

PV501BA

PV501BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7.5m @VGS = -10V -30V -12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-12IDContinuous Drain CurrentTA = 70 C-9.6AIDM-50Pulsed Drain

 ..2. Size:260K  niko-sem
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PV501BA

P-Channel Logic Level Enhancement Mode PV501BANIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m -12A -30V DGFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , IRFB4115 , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA .

History: IRFPG20 | NTGS3130N | FQPF13N50 | IPP60R099P6 | NVHL025N65S3 | IRFBE30 | 2SJ505S

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