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PV516DA Specs and Replacement


   Type Designator: PV516DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8
 

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PV516DA datasheet

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PV516DA

PV516DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 35m @VGS = 4.5V 20V 5.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TA = 25 C 5.4 ID Continuous Drain Current TA= 70 C 4.3 A IDM 15 Pulsed Drain Curr... See More ⇒

Detailed specifications: P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , PV507BA , PV510BA , IRFP250N , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA , PV628BA .

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