All MOSFET. PV516DA Datasheet

 

PV516DA MOSFET. Datasheet pdf. Equivalent

Type Designator: PV516DA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.7 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 5.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 84 pF

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: SOP8

PV516DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PV516DA Datasheet (PDF)

0.1. pv516da.pdf Size:464K _unikc

PV516DA
PV516DA

PV516DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 35mΩ @VGS = 4.5V 20V 5.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 TA = 25 ° C 5.4 ID Continuous Drain Current TA= 70 ° C 4.3 A IDM 15 Pulsed Drain Curr

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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