PV516DA Datasheet. Specs and Replacement

Type Designator: PV516DA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP8

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PV516DA datasheet

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PV516DA

PV516DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 35m @VGS = 4.5V 20V 5.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TA = 25 C 5.4 ID Continuous Drain Current TA= 70 C 4.3 A IDM 15 Pulsed Drain Curr... See More ⇒

Detailed specifications: P5015BTF, P50N03LTG, P5803NAG, P5806NVG, PB521BX, PV501BA, PV507BA, PV510BA, IRF630, PV537BA, PV548BA, PV551BA, PV600BA, PV601CA, PV604CA, PV606BA, PV628BA

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