All MOSFET. PV516DA Datasheet

 

PV516DA Datasheet and Replacement


   Type Designator: PV516DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8
 

 PV516DA substitution

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PV516DA Datasheet (PDF)

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PV516DA

PV516DADual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID35m @VGS = 4.5V20V 5.4ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20VVGSGate-Source Voltage 8TA = 25 C5.4IDContinuous Drain CurrentTA= 70 C4.3AIDM15Pulsed Drain Curr

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