PV551BA Datasheet. Specs and Replacement
Type Designator: PV551BA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
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PV551BA datasheet
pv551ba.pdf
PV551BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7 A IDM -40 Pulsed Drain Curr... See More ⇒
pv551ba.pdf
P-Channel Logic Level Enhancement Mode PV551BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m -9A -30V G G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VG... See More ⇒
Detailed specifications: P5806NVG, PB521BX, PV501BA, PV507BA, PV510BA, PV516DA, PV537BA, PV548BA, 2N7000, PV600BA, PV601CA, PV604CA, PV606BA, PV628BA, PV628DA, PV650BA, P6002OAG
Keywords - PV551BA MOSFET specs
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