All MOSFET. PV551BA Datasheet

 

PV551BA Datasheet and Replacement


   Type Designator: PV551BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

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PV551BA Datasheet (PDF)

 ..1. Size:785K  unikc
 pv551ba.pdf pdf_icon

PV551BA

PV551BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-9IDContinuous Drain CurrentTA = 70 C-7AIDM-40Pulsed Drain Curr

 ..2. Size:360K  niko-sem
 pv551ba.pdf pdf_icon

PV551BA

P-Channel Logic Level Enhancement Mode PV551BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m -9A -30V GG : GATE D : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VG

Datasheet: P5806NVG , PB521BX , PV501BA , PV507BA , PV510BA , PV516DA , PV537BA , PV548BA , IRLZ44N , PV600BA , PV601CA , PV604CA , PV606BA , PV628BA , PV628DA , PV650BA , P6002OAG .

History: CHM3K33VESGP

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