All MOSFET. PV551BA Datasheet

 

PV551BA MOSFET. Datasheet pdf. Equivalent

Type Designator: PV551BA

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: SOP8

PV551BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PV551BA Datasheet (PDF)

0.1. pv551ba.pdf Size:785K _unikc

PV551BA PV551BA

PV551BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -9 ID Continuous Drain Current TA = 70 ° C -7 A IDM -40 Pulsed Drain Curr

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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