PV650BA Specs and Replacement
Type Designator: PV650BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 305 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: SOP8
PV650BA substitution
PV650BA datasheet
pv650ba.pdf
PV650BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.5m @VGS = 10V 30V 15A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 15 ID Continuous Drain Current TA = 70 C 12 A IDM 60 Pulsed Drain Current1 ... See More ⇒
Detailed specifications: PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA , PV628BA , PV628DA , AO3401 , P6002OAG , P6003QEA , P6004ED , P6006BD , P6006BI , P6006HV , P6010DDG , P6010DTFG .
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