All MOSFET. PV650BA Datasheet

 

PV650BA Datasheet and Replacement


   Type Designator: PV650BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: SOP8
 

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PV650BA Datasheet (PDF)

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PV650BA

PV650BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.5m @VGS = 10V30V 15ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTA = 25 C15IDContinuous Drain CurrentTA = 70 C12AIDM60Pulsed Drain Current1

Datasheet: PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA , PV628BA , PV628DA , AO3400 , P6002OAG , P6003QEA , P6004ED , P6006BD , P6006BI , P6006HV , P6010DDG , P6010DTFG .

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