PV650BA Datasheet. Specs and Replacement

Type Designator: PV650BA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: SOP8

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PV650BA datasheet

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PV650BA

PV650BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.5m @VGS = 10V 30V 15A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 15 ID Continuous Drain Current TA = 70 C 12 A IDM 60 Pulsed Drain Current1 ... See More ⇒

Detailed specifications: PV548BA, PV551BA, PV600BA, PV601CA, PV604CA, PV606BA, PV628BA, PV628DA, BS170, P6002OAG, P6003QEA, P6004ED, P6006BD, P6006BI, P6006HV, P6010DDG, P6010DTFG

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