All MOSFET. G2003 Datasheet

 

G2003 Datasheet and Replacement


   Type Designator: G2003
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: SOP8
 

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G2003 Datasheet (PDF)

 ..1. Size:1028K  goford
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G2003

GOFORDG2003Description The G2003 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ)520m 200V 2.5A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 0.1. Size:1106K  goford
 g2003a.pdf pdf_icon

G2003

GOFORDG2003AN-Channel Enhancement Mode Power MOSFET Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS = 190V,ID =3A RDS(ON)

Datasheet: ECYA , G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , IRFB3607 , G2005 , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 .

History: SWD050R95E8S

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