G2003 Datasheet. Specs and Replacement

Type Designator: G2003  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: SOP8

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G2003 datasheet

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G2003

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G2003

GOFORD G2003A N-Channel Enhancement Mode Power MOSFET Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS = 190V,ID =3A RDS(ON) ... See More ⇒

Detailed specifications: ECYA, G1002, G1002L, G1003A, G1006, G1006A, G1008, G2002, P55NF06, G2005, G2005K, G2009, G2009K, G20N20, G2304, G2305, G2502

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