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G2003 Spec and Replacement


   Type Designator: G2003
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: SOP8

 G2003 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G2003 Specs

 ..1. Size:1028K  goford
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G2003

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 0.1. Size:1106K  goford
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G2003

GOFORD G2003A N-Channel Enhancement Mode Power MOSFET Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS = 190V,ID =3A RDS(ON) ... See More ⇒

Detailed specifications: ECYA , G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , K4145 , G2005 , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 .

History: DHI035N04

Keywords - G2003 MOSFET specs

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