All MOSFET. G2009 Datasheet

 

G2009 Datasheet and Replacement


   Type Designator: G2009
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO251
 

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G2009 Datasheet (PDF)

 ..1. Size:1073K  goford
 g2009.pdf pdf_icon

G2009

GOFORDG2009Description The 2009 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @10V (typ) 200V 260m 9A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Low g

 0.1. Size:1908K  goford
 g2009k.pdf pdf_icon

G2009

GOFORDG2009KDescription uses advanced trench technology and The G2009K design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @10V (typ) 200V 260m 9A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

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