G2009 Datasheet. Specs and Replacement

Type Designator: G2009  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO251

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G2009 datasheet

 ..1. Size:1073K  goford
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G2009

GOFORD G2009 Description The 2009 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ 10V (typ) 200V 260m 9A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Low g... See More ⇒

 0.1. Size:1908K  goford
 g2009k.pdf pdf_icon

G2009

GOFORD G2009K Description uses advanced trench technology and The G2009K design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ 10V (typ) 200V 260m 9A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ... See More ⇒

Detailed specifications: G1003A, G1006, G1006A, G1008, G2002, G2003, G2005, G2005K, 5N65, G2009K, G20N20, G2304, G2305, G2502, G2503, G100N03, G100N04

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