2002A Datasheet. Specs and Replacement

Type Designator: 2002A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: SOT23-6

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2002A datasheet

 ..1. Size:2068K  goford
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2002A

GOFORD 2002A Description uses advanced trench technology and The 2002A D design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. G General Features VDSS RDS(ON) ID S @ 10V (typ) Schematic diagram 200V 520m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre... See More ⇒

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2002A

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Detailed specifications: G120N04A, G15P04, G1815, G1816, G1825, 15P03, 16N10, 18N10, 18N50, 20P10, 21N06, 22N10, 2301H, 2301L, 25P06, 25P10, 25P10G

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