2002A Datasheet and Replacement
Type Designator: 2002A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: SOT23-6
2002A substitution
2002A Datasheet (PDF)
2002a.pdf
GOFORD2002ADescription uses advanced trench technology and The 2002ADdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. GGeneral Features VDSS RDS(ON) ID S @10V (typ)Schematic diagram 200V 520m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre
Datasheet: G120N04A , G15P04 , G1815 , G1816 , G1825 , 15P03 , 16N10 , 18N10 , SKD502T , 20P10 , 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 , 25P10G .
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History: 26N50 | FXN09150C
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