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2002A PDF Specs and Replacement


   Type Designator: 2002A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: SOT23-6
 

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2002A PDF Specs

 ..1. Size:2068K  goford
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2002A

GOFORD 2002A Description uses advanced trench technology and The 2002A D design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. G General Features VDSS RDS(ON) ID S @ 10V (typ) Schematic diagram 200V 520m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre... See More ⇒

 0.1. Size:114K  isahaya
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2002A

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Detailed specifications: G120N04A , G15P04 , G1815 , G1816 , G1825 , 15P03 , 16N10 , 18N10 , RFP50N06 , 20P10 , 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 , 25P10G .

History: HM60N05

Keywords - 2002A MOSFET specs

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