IRF614S Datasheet and Replacement
Type Designator: IRF614S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 8.2(max) nC
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO263
IRF614S substitution
IRF614S Datasheet (PDF)
irf614spbf.pdf
IRF614S, SiHF614SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250 Definition Surface MountRDS(on) ()VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt RatingQgs (nC) 1.8 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Sin
irf614pbf.pdf
IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD
Datasheet: IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , SPP20N60C3 , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L .
History: SM2225NSQG
Keywords - IRF614S MOSFET datasheet
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History: SM2225NSQG
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