All MOSFET. IRF614S Datasheet

 

IRF614S MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF614S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2(max) nC
   trⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263

 IRF614S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF614S Datasheet (PDF)

 ..1. Size:174K  international rectifier
 irf614s.pdf

IRF614S IRF614S

 ..2. Size:197K  international rectifier
 irf614spbf.pdf

IRF614S IRF614S

IRF614S, SiHF614SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250 Definition Surface MountRDS(on) ()VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt RatingQgs (nC) 1.8 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Sin

 8.1. Size:295K  1
 irf614 irf615.pdf

IRF614S IRF614S

 8.2. Size:134K  international rectifier
 irf614pbf.pdf

IRF614S IRF614S

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD

 8.3. Size:919K  international rectifier
 irf614.pdf

IRF614S IRF614S

PD - 94849IRF614PbF Lead-Free11/25/06Document Number: 91025 www.vishay.com1IRF614PbFDocument Number: 91025 www.vishay.com2IRF614PbFDocument Number: 91025 www.vishay.com3IRF614PbFDocument Number: 91025 www.vishay.com4IRF614PbFDocument Number: 91025 www.vishay.com5IRF614PbFDocument Number: 91025 www.vishay.com6IRF614PbFTO-220AB Package Outline

 8.4. Size:855K  fairchild semi
 irf614b.pdf

IRF614S IRF614S

November 2001IRF614B/IRFS614B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to

 8.5. Size:945K  samsung
 irf614a.pdf

IRF614S IRF614S

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 8.6. Size:133K  vishay
 irf614 sihf614.pdf

IRF614S IRF614S

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD

Datasheet: IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , 2SK3568 , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L .

 

 
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