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IRF614S Spec and Replacement


   Type Designator: IRF614S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263

 IRF614S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF614S Specs

 ..1. Size:174K  international rectifier
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IRF614S

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 ..2. Size:197K  international rectifier
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IRF614S

IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Surface Mount RDS(on) ( )VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Qgs (nC) 1.8 Repetitive Avalanche Rated Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Sin... See More ⇒

 8.1. Size:295K  1
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IRF614S

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 8.2. Size:134K  international rectifier
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IRF614S

IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Simple Drive Requirements Qgd (nC) 4.5 Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒

Detailed specifications: IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , K3569 , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L .

History: AP50WN1K0I

Keywords - IRF614S MOSFET specs

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