All MOSFET. IRF614S Datasheet

 

IRF614S Datasheet and Replacement


   Type Designator: IRF614S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263
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IRF614S Datasheet (PDF)

 ..1. Size:174K  international rectifier
 irf614s.pdf pdf_icon

IRF614S

 ..2. Size:197K  international rectifier
 irf614spbf.pdf pdf_icon

IRF614S

IRF614S, SiHF614SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250 Definition Surface MountRDS(on) ()VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt RatingQgs (nC) 1.8 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Sin

 8.1. Size:295K  1
 irf614 irf615.pdf pdf_icon

IRF614S

 8.2. Size:134K  international rectifier
 irf614pbf.pdf pdf_icon

IRF614S

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD

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Datasheet: IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , 2SK3568 , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L .

History: SPB65R180G

Keywords - IRF614S MOSFET datasheet

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