IRF614S Spec and Replacement
Type Designator: IRF614S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO263
IRF614S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF614S Specs
irf614spbf.pdf
IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Surface Mount RDS(on) ( )VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Qgs (nC) 1.8 Repetitive Avalanche Rated Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Sin... See More ⇒
irf614pbf.pdf
IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Simple Drive Requirements Qgd (nC) 4.5 Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒
Detailed specifications: IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , K3569 , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L .
History: AP50WN1K0I
Keywords - IRF614S MOSFET specs
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History: AP50WN1K0I
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