SQ2348ES-T1 Datasheet. Specs and Replacement

Type Designator: SQ2348ES-T1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

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SQ2348ES-T1 datasheet

 ..1. Size:1450K  cn vbsemi
 sq2348es-t1.pdf pdf_icon

SQ2348ES-T1

SQ2348ES-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)... See More ⇒

 6.1. Size:256K  vishay
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SQ2348ES-T1

SQ2348ES www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 AEC-Q101 qualified c RDS(on) ( ) at VGS = 10 V 0.024 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.032 Material categorization ID (A) 8 for definitions of compliance please see Configuration Single ww... See More ⇒

Detailed specifications: CS7N60A4R, NCE0108AS, NTF5P03T3G, NTGS3443T1G, NTGS4111PT, CS7N60FA9R, SSM3K335, CS7N65A3R, IRFZ24N, CS7N65A4R, STD2NB60T4, CS7N65FA9R, SI4848DY-T1, SI4848DY-T1-E3, SI4850DY-T1, CS7N80FA9, ST2315S23R

Keywords - SQ2348ES-T1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.