VB1330 Datasheet. Specs and Replacement

Type Designator: VB1330  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

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VB1330 datasheet

 ..1. Size:463K  cn vbsemi
 vb1330.pdf pdf_icon

VB1330

VB1330 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒

 0.1. Size:572K  cn vbsemi
 vb1330x.pdf pdf_icon

VB1330

VB1330X www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.016 at VGS = 10 V TrenchFET Power MOSFET 8.0 30 4 nC 100 % Rg Tested 0.023 at VGS = 4.5 V 6.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1... See More ⇒

Detailed specifications: CS8N60ARD, TP0610K-T1, TPC8103, TPC8104, TK40P04M, CS8N70FA9H2-G, CS8N80A8D, CS8N80A8H, IRFP260N, CS8N80FA9H, CS8N90A8, CS8N90FA9, VB162K, CS90N03B3, UT9435G, UTM4052L, UTM6016G

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