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VB1330 Spec and Replacement


   Type Designator: VB1330
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23

 VB1330 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VB1330 Specs

 ..1. Size:463K  cn vbsemi
 vb1330.pdf pdf_icon

VB1330

VB1330 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒

 0.1. Size:572K  cn vbsemi
 vb1330x.pdf pdf_icon

VB1330

VB1330X www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.016 at VGS = 10 V TrenchFET Power MOSFET 8.0 30 4 nC 100 % Rg Tested 0.023 at VGS = 4.5 V 6.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1... See More ⇒

Detailed specifications: CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G , CS8N80A8D , CS8N80A8H , IRF640N , CS8N80FA9H , CS8N90A8 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , UTM4052L , UTM6016G .

History: HM80N15 | H5N2503P | F20N50 | IXFX66N50Q2 | TMD830AZ | TMD8N50Z | IRF640P

Keywords - VB1330 MOSFET specs

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