CSZ44V-1 Datasheet. Specs and Replacement
Type Designator: CSZ44V-1 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220AB
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CSZ44V-1 substitution
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CSZ44V-1 datasheet
csz44v-1.pdf
Silicon N-Channel Power MOSFET R CSZ44V-1 General Description VDSS 60 V CSZ44V-1, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ... See More ⇒
Detailed specifications: CS8N80FA9H, CS8N90A8, CS8N90FA9, VB162K, CS90N03B3, UT9435G, UTM4052L, UTM6016G, AO3400, AO4600, AO4604, AO4609, AO4614A, AO4624, SI4558DY, SI5504DC, SI5513CD
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MOSFET Parameters. How They Affect Each Other
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