CSZ44V-1 Datasheet and Replacement
Type Designator: CSZ44V-1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220AB
CSZ44V-1 substitution
CSZ44V-1 Datasheet (PDF)
csz44v-1.pdf

Silicon N-Channel Power MOSFET R CSZ44V-1 General Description VDSS 60 V CSZ44V-1, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ
Datasheet: CS8N80FA9H , CS8N90A8 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , UTM4052L , UTM6016G , IRFB4115 , AO4600 , AO4604 , AO4609 , AO4614A , AO4624 , SI4558DY , SI5504DC , SI5513CD .
History: EMH2408 | BUK92150-55A | MCH6321 | FDP7030L
Keywords - CSZ44V-1 MOSFET datasheet
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History: EMH2408 | BUK92150-55A | MCH6321 | FDP7030L



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