All MOSFET. NDT35N06 Datasheet

 

NDT35N06 Datasheet and Replacement


   Type Designator: NDT35N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252
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NDT35N06 Datasheet (PDF)

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NDT35N06

SMD Type MOSFETN-Channel Enhancement MOSFETNDT35N06TO-252Unit: mm Features+ 0.156.50- 0.15+ 0.12.30- 0.1+ 0.25.30- 0.2 VDS (V) = 60V + 0.80.50 - 0.7 ID = 35 A4 RDS(ON) 23m (VGS = 10V)2,4 RDS(ON) 33m (VGS = 4.5V)0.127+0.10.80-0.1max RDS(ON) 37m (VGS = 4V)1+ 0.1 1 : Gate2.3 0.60- 0.1+ 0.152 : Drain4

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | SFFX054Z | AM35N03-59D | TK7P65W

Keywords - NDT35N06 MOSFET datasheet

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