NDT35N06 Datasheet. Specs and Replacement

Type Designator: NDT35N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

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NDT35N06 datasheet

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NDT35N06

SMD Type MOSFET N-Channel Enhancement MOSFET NDT35N06 TO-252 Unit mm Features + 0.15 6.50- 0.15 + 0.1 2.30- 0.1 + 0.2 5.30- 0.2 VDS (V) = 60V + 0.8 0.50 - 0.7 ID = 35 A 4 RDS(ON) 23m (VGS = 10V) 2,4 RDS(ON) 33m (VGS = 4.5V) 0.127 +0.1 0.80-0.1 max RDS(ON) 37m (VGS = 4V) 1 + 0.1 1 Gate 2.3 0.60- 0.1 + 0.15 2 Drain 4... See More ⇒

Detailed specifications: NDT06N03, NDT110N03, NDT15N10, NDT18N06, NDT1N70, NDT25N06, NDT2N60, NDT2N60P, IRFZ44N, NDT4N20L, NDT4N60, NDT4N65, NDT4N65P, NDT4N70, NDT50N03, NDT5N70P, NDT6N60

Keywords - NDT35N06 MOSFET specs

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