NDT50N03 Datasheet and Replacement
Type Designator: NDT50N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 615 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO252
NDT50N03 substitution
NDT50N03 Datasheet (PDF)
ndt50n03.pdf
SMD Type MOSFETN-Channel MOSFET NDT50N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 30V ID = 90 A (VGS = 10V)D RDS(ON) 5.7m (VGS = 10V)0.127+0.10.80-0.1 RDS(ON) 7.8m (VGS = 4.5V) maxG+ 0.11Gate2.3 0.60- 0.1+0.154.60 -0.152Drain3SourceS Absolute Maximum Ratings
Datasheet: NDT2N60 , NDT2N60P , NDT35N06 , NDT4N20L , NDT4N60 , NDT4N65 , NDT4N65P , NDT4N70 , 50N06 , NDT5N70P , NDT6N60 , NDT6N60P , NDT6N65P , NDT6N70 , NDT6N70P , NDT70N03 , NDT70N06 .
History: BLF6G38S-25 | TJ15S10M3 | NTD2955VT4G | JCS6N70V | STP90N15F4 | PHP3055L | AP60WN1K2J
Keywords - NDT50N03 MOSFET datasheet
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History: BLF6G38S-25 | TJ15S10M3 | NTD2955VT4G | JCS6N70V | STP90N15F4 | PHP3055L | AP60WN1K2J
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