All MOSFET. NDT50N03 Datasheet

 

NDT50N03 Datasheet and Replacement


   Type Designator: NDT50N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO252
 

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NDT50N03 Datasheet (PDF)

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NDT50N03

SMD Type MOSFETN-Channel MOSFET NDT50N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 30V ID = 90 A (VGS = 10V)D RDS(ON) 5.7m (VGS = 10V)0.127+0.10.80-0.1 RDS(ON) 7.8m (VGS = 4.5V) maxG+ 0.11Gate2.3 0.60- 0.1+0.154.60 -0.152Drain3SourceS Absolute Maximum Ratings

Datasheet: NDT2N60 , NDT2N60P , NDT35N06 , NDT4N20L , NDT4N60 , NDT4N65 , NDT4N65P , NDT4N70 , 50N06 , NDT5N70P , NDT6N60 , NDT6N60P , NDT6N65P , NDT6N70 , NDT6N70P , NDT70N03 , NDT70N06 .

History: AUIRF7640S2 | SUD40N04-10A | 2SK3686-01 | QS5U13 | AUIRFP4409 | MSJAC11N65Y | TPC8218-H

Keywords - NDT50N03 MOSFET datasheet

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