IRF723 Datasheet and Replacement
Type Designator: IRF723
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 200(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220
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IRF723 Datasheet (PDF)
irf7233.pdf
PD- 91849DIRF7233HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitp
irf7233pbf.pdf
PD - 95939IRF7233PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
Datasheet: IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF720S , IRF721 , IRF722 , IRF7220 , 8205A , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 .
Keywords - IRF723 MOSFET datasheet
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History: IRF634 | IRF453
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