IRF723 Datasheet. Specs and Replacement

Type Designator: IRF723  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 max nS

Cossⓘ - Output Capacitance: 200 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220

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IRF723 datasheet

 0.1. Size:92K  international rectifier
irf7233.pdf pdf_icon

IRF723

PD- 91849D IRF7233 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit p... See More ⇒

 0.2. Size:161K  international rectifier
irf7233pbf.pdf pdf_icon

IRF723

PD - 95939 IRF7233PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -12V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

Detailed specifications: IRF7205, IRF7207, IRF720A, IRF720FI, IRF720S, IRF721, IRF722, IRF7220, AON6426, IRF7233, IRF730, IRF730A, IRF730AL, IRF730AS, IRF730FI, IRF730S, IRF731

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