All MOSFET. IRF742 Datasheet

 

IRF742 Datasheet and Replacement


   Type Designator: IRF742
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 63(max) nC
   tr ⓘ - Rise Time: 15(max) nS
   Cossⓘ - Output Capacitance: 450(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220
 

 IRF742 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRF742 Datasheet (PDF)

 ..1. Size:482K  st
irf740 irf741 irf742 irf743-fi.pdf pdf_icon

IRF742

 0.1. Size:122K  international rectifier
irf7424pbf.pdf pdf_icon

IRF742

PD- 95343IRF7424PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-resista

 0.2. Size:223K  international rectifier
irf7421d1pbf.pdf pdf_icon

IRF742

PD- 95304IRF7421D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET PowerAA1 8MOSFET and Schottky Diode A DVDSS = 30Vl Ideal For Synchronous Regulator 2 7S DApplications3 6S DRDS(on) = 0.035l Generation V Technology4 5G Dl SO-8 FootprintSchottky Vf = 0.39Vl Lead-FreeTop View DescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky

Datasheet: IRF740AL , IRF740AS , IRF740FI , IRF740S , IRF741 , IRF7413 , IRF7413A , IRF7416 , K3569 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , NCEP85T16D , NCEP85T25D , NCEP85T25T , NCEP85T35T .

History: DH019N04B

Keywords - IRF742 MOSFET datasheet

 IRF742 cross reference
 IRF742 equivalent finder
 IRF742 lookup
 IRF742 substitution
 IRF742 replacement

 

 
Back to Top

 


 
.