CS4145 Datasheet. Specs and Replacement

Type Designator: CS4145  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO220AB

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CS4145 datasheet

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CS4145

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4145 A8H General Description VDSS 60 V CS4145 A8H, the silicon N-channel Enhanced ID 84 A PD(TC=25 ) 200 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 8.5 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ... See More ⇒

Detailed specifications: 2SK3435, 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3, CEP51A3, AON7506, FDD6035AL, FHP740, FTP08N06A, GPT13N50, GPT13N50D, JCS4N65C, JCS4N65F, JCS4N65R

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