CS4145 Specs and Replacement
Type Designator: CS4145
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 84 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 375 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220AB
CS4145 substitution
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CS4145 datasheet
cs4145.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4145 A8H General Description VDSS 60 V CS4145 A8H, the silicon N-channel Enhanced ID 84 A PD(TC=25 ) 200 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 8.5 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ... See More ⇒
Detailed specifications: 2SK3435 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N , B3942 , CEB51A3 , CEP51A3 , IRFB3607 , FDD6035AL , FHP740 , FTP08N06A , GPT13N50 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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