GPT13N50 Datasheet. Specs and Replacement

Type Designator: GPT13N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 193 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm

Package: TO220

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GPT13N50 datasheet

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GPT13N50

GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 TO-220F 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 GPT13N50 / G... See More ⇒

Detailed specifications: APM2014N, B3942, CEB51A3, CEP51A3, CS4145, FDD6035AL, FHP740, FTP08N06A, CS150N03A8, GPT13N50D, JCS4N65C, JCS4N65F, JCS4N65R, JCS4N65V, LSK389, MDV1528, ME60N03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.