All MOSFET. GPT13N50 Datasheet

 

GPT13N50 Datasheet and Replacement


   Type Designator: GPT13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 193 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: TO220
 

 GPT13N50 substitution

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GPT13N50 Datasheet (PDF)

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 gpt13n50 gpt13n50d.pdf pdf_icon

GPT13N50

GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 TO-220F 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 GPT13N50 / G

Datasheet: APM2014N , B3942 , CEB51A3 , CEP51A3 , CS4145 , FDD6035AL , FHP740 , FTP08N06A , IRFP450 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , LSK389 , MDV1528 , ME60N03 .

History: HUF75645P3 | 2SK3447 | IRFS7530 | NTMFS6B05NT1G | RQJ0306FQDQA | FQT13N06 | APT10025PVR

Keywords - GPT13N50 MOSFET datasheet

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