GPT13N50 Specs and Replacement
Type Designator: GPT13N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 193 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
Package: TO220
GPT13N50 substitution
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GPT13N50 datasheet
gpt13n50 gpt13n50d.pdf
GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 TO-220F 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 GPT13N50 / G... See More ⇒
Detailed specifications: APM2014N , B3942 , CEB51A3 , CEP51A3 , CS4145 , FDD6035AL , FHP740 , FTP08N06A , NCEP15T14 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , LSK389 , MDV1528 , ME60N03 .
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