All MOSFET. GPT13N50 Datasheet

 

GPT13N50 Datasheet and Replacement


   Type Designator: GPT13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 193 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: TO220
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GPT13N50 Datasheet (PDF)

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GPT13N50

GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 TO-220F 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 GPT13N50 / G

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History: TK2P60D | IRFBG20

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