JCS4N65V MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS4N65V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 51 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 62 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: IPAK
JCS4N65V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS4N65V Datasheet (PDF)
7.1. jcs4n65f-c-r-v.pdf 
Size:779K _jilin_sino
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8.1. jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf Size:1019K _1
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60B 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson（Vgs=10V） 2.4Ω 13.3nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源 based on half bridge UPS 产品特性
8.2. jcs4n60f.pdf Size:948K _jilin_sino
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Datasheet: FDD6035AL , FHP740 , FTP08N06A , GPT13N50 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R , IRF1010E , LSK389 , MDV1528 , ME60N03 , ME60N03A , NE5520279A , NTE458 , PHB55N03LTA , PHD55N03LTA .
