All MOSFET. JCS4N65V Datasheet

 

JCS4N65V MOSFET. Datasheet pdf. Equivalent

Type Designator: JCS4N65V

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 51 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 62 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: IPAK

JCS4N65V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS4N65V Datasheet (PDF)

7.1. jcs4n65f-c-r-v.pdf Size:779K _jilin_sino

JCS4N65V
JCS4N65V

N lSX:_W:WHe^vfSO{ R N-CHANNEL MOSFET JCS4N65C \ň Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS RdsonVgs=10V 2.5 9nC Qg APPLICATIONS (u High frequency switching

8.1. jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf Size:1019K _1

JCS4N65V
JCS4N65V

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60B 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson(Vgs=10V) 2.4Ω 13.3nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源 based on half bridge UPS 产品特性

8.2. jcs4n60f.pdf Size:948K _jilin_sino

JCS4N65V
JCS4N65V

N lSX:_W:WHe^vfSO{ R N-CHANNEL MOSFET JCS4N60 \ň Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V 27 nC Qg APPLICATIONS (u High efficiency switch

Datasheet: FDD6035AL , FHP740 , FTP08N06A , GPT13N50 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R , IRF1010E , LSK389 , MDV1528 , ME60N03 , ME60N03A , NE5520279A , NTE458 , PHB55N03LTA , PHD55N03LTA .

 

 
Back to Top