JCS4N65V MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS4N65V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 51 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 62 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: IPAK
JCS4N65V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS4N65V Datasheet (PDF)
0.1. jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf 
Size:1510K _jilin_sino
R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate
0.2. jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf Size:1866K _jilin_sino
RJCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_Typ 2.1 Vgs=1Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switchingmode power supply Electronic ballastLED LED power supply FEATURES Low g
0.3. jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf Size:831K _jilin_sino
N RN-CHANNEL MOSFETJCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
0.4. jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf Size:1598K _jilin_sino
N RN-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V RdsonVgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
