PHB55N03LTA MOSFET. Datasheet pdf. Equivalent

   Type Designator: PHB55N03LTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: D2PAK

PHB55N03LTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS