All MOSFET. STK0460F Datasheet

 

STK0460F Datasheet and Replacement


   Type Designator: STK0460F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F
 

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STK0460F Datasheet (PDF)

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STK0460F

STK0460FSemiconductor Semiconductor Advanced Power MOSFETSWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=7.5pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=2.5(Max.) Ordering Information Type NO. Marking Package Code STK0460F STK0460 TO-220F-3LOutline Dimensions unit : mm 3.05~3.35 9.8

Datasheet: QM3006D , SI4340DY , SPB80N08S2L , SPP80N08S2L , STK630F , TSF8N60M , TSP8N60M , UTC50N06L , IRFB31N20D , FMH23N50E , FMV23N50E , FMR23N50E , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D .

History: FDD3N40

Keywords - STK0460F MOSFET datasheet

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