SVF7N65F Datasheet. Specs and Replacement
Type Designator: SVF7N65F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 98.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
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SVF7N65F datasheet
svf7n65f-t.pdf
SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching... See More ⇒
Detailed specifications: AO4472, AON6324, SD2932, STK1820F, STP55NE06, STP55NE06FP, SUD50N024-06P, SVF7N65T, AO3401, AO3405, AO3407G, AO3701, AO4420A, AO4433, AO4456, AO4458, AO4474
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