IRF9230 Datasheet: MOSFET, P-Ch, 200V, 6.5A. Full specification with pinout and replacement list

IRF9230 Datasheet. Specs and Replacement

Type Designator: IRF9230 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 max nS

Cossⓘ - Output Capacitance: 300 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO3

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IRF9230 substitution

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IRF9230 datasheet

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PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED IRF9240 HEXFET TRANSISTORS 200V, P-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF9240 -200V 0.5 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒