All MOSFET. IRF9230 Datasheet

 

IRF9230 Datasheet and Replacement


   Type Designator: IRF9230
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45(max) nC
   tr ⓘ - Rise Time: 100(max) nS
   Cossⓘ - Output Capacitance: 300(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO3
 

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IRF9230 Datasheet (PDF)

 ..1. Size:149K  international rectifier
 2n6806 irf9230.pdf pdf_icon

IRF9230

PD - 90548CIRF9230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806HEXFETTRANSISTORS JANTXV2N6806THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9230 -200V 0.80 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique p

 ..2. Size:504K  samsung
 irf9230 irf9231 irf9232 irf9233 irfp9230 irfp9231 irfp9232 irfp9233 irf9630 irf9631 irf9632 irf9633.pdf pdf_icon

IRF9230

 0.1. Size:519K  samsung
 irfp9230-33 irf9230-33 irf9630-33.pdf pdf_icon

IRF9230

 9.1. Size:147K  international rectifier
 irf9240.pdf pdf_icon

IRF9230

PD - 90420REPETITIVE AVALANCHE AND dv/dt RATED IRF9240HEXFETTRANSISTORS 200V, P-CHANNELTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF9240 -200V 0.5 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

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Datasheet: IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF843 , IRF9130 , IRF9140 , STP65NF06 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , IRF9511 , IRF9512 , IRF9513 , IRF9520 .

Keywords - IRF9230 MOSFET datasheet

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