IRF9230 MOSFET Datasheet: P-Ch, 200V, 6.5A. Full specification with pinout and replacement list

IRF9230 Specs and Replacement

Type Designator: IRF9230

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100(max) nS

Cossⓘ - Output Capacitance: 300(max) pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO3

IRF9230 substitution

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IRF9230 datasheet

..1. Size:149K international rectifier
2n6806 irf9230.pdf pdf_icon

PD - 90548C IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806 HEXFET TRANSISTORS JANTXV2N6806 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9230 -200V 0.80 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique p... See More ⇒

..2. Size:504K samsung
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0.1. Size:519K samsung
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9.1. Size:147K international rectifier
irf9240.pdf pdf_icon

PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED IRF9240 HEXFET TRANSISTORS 200V, P-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF9240 -200V 0.5 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒