All MOSFET. AO4296 Datasheet

 

AO4296 Datasheet and Replacement


   Type Designator: AO4296
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: SO-8
 
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AO4296 Datasheet (PDF)

 ..1. Size:369K  aosemi
 ao4296.pdf pdf_icon

AO4296

AO4296TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 13.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:334K  aosemi
 ao4294.pdf pdf_icon

AO4296

AO4294100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 11.5A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:344K  aosemi
 ao4294a.pdf pdf_icon

AO4296

AO4294ATM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11.5A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.3. Size:380K  aosemi
 ao4290a.pdf pdf_icon

AO4296

AO4290ATM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 15.5A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

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Datasheet: AO4262E , AO4264E , AO4266E , AO4268 , AO4290A , AO4292E , AO4294 , AO4294A , AON6414A , AO4402G , AO4405E , AO4423-L , AO4630 , AO4840E , AO4862E , AO6411 , AO6602G .

Keywords - AO4296 MOSFET datasheet

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