All MOSFET. AON6382 Datasheet

 

AON6382 Datasheet and Replacement


   Type Designator: AON6382
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 875 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00185 Ohm
   Package: DFN5X6
 

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AON6382 Datasheet (PDF)

 ..1. Size:339K  1
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AON6382

AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:339K  aosemi
 aon6382.pdf pdf_icon

AON6382

AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:368K  1
 aon6380.pdf pdf_icon

AON6382

AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:344K  aosemi
 aon6384.pdf pdf_icon

AON6382

AON638430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

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Keywords - AON6382 MOSFET datasheet

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