AON6382 Datasheet and Replacement
Type Designator: AON6382
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 875 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00185 Ohm
Package: DFN5X6
AON6382 substitution
AON6382 Datasheet (PDF)
aon6382.pdf

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aon6382.pdf

AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
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AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
aon6384.pdf

AON638430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6358 , AON6360 , AON6362 , AON6366E , AON6368 , AON6370 , AON6372 , AON6380 , IRF840 , AON6384 , AON6406 , AON6528 , AON6548 , AON6560 , AON6590 , AON6661 , AON6667 .
Keywords - AON6382 MOSFET datasheet
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