All MOSFET. AP6A100M Datasheet

 

AP6A100M MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP6A100M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO8

 AP6A100M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6A100M Datasheet (PDF)

 ..1. Size:185K  ape
 ap6a100m.pdf

AP6A100M AP6A100M

AP6A100MHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 60VD2D2 Small Package Outline D1 RDS(ON) 100mD1 Surface Mount Device ID3 3.3AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2D1AP6A100 series are from Advanced Power innovated design andsilicon proces

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top