All MOSFET. AP6A100M Datasheet

 

AP6A100M Datasheet and Replacement


   Type Designator: AP6A100M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO8
 

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AP6A100M Datasheet (PDF)

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AP6A100M

AP6A100MHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 60VD2D2 Small Package Outline D1 RDS(ON) 100mD1 Surface Mount Device ID3 3.3AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2D1AP6A100 series are from Advanced Power innovated design andsilicon proces

Datasheet: AP4511GM , AP4513GM , AP4525GEM , AP4532GM , AP4533GEM , AP4578GM , AP4963GEM , AP5322GM , AON7403 , AP6C036M , AP6C072M , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM , AP9960GM , AP9962AGM .

History: HSU6006 | LSGC03R020 | IXFH18N90P | STD5NK60ZT4 | 2SK3472 | AP4435GH | MPSU65M390

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