AP6A100M Datasheet and Replacement
Type Designator: AP6A100M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SO8
AP6A100M substitution
AP6A100M Datasheet (PDF)
ap6a100m.pdf
AP6A100MHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 60VD2D2 Small Package Outline D1 RDS(ON) 100mD1 Surface Mount Device ID3 3.3AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2D1AP6A100 series are from Advanced Power innovated design andsilicon proces
Datasheet: AP4511GM , AP4513GM , AP4525GEM , AP4532GM , AP4533GEM , AP4578GM , AP4963GEM , AP5322GM , MMD60R360PRH , AP6C036M , AP6C072M , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM , AP9960GM , AP9962AGM .
History: HYG060N08NS1P | HFP10N65U | HM75N75 | AO4932 | AP97T07AGP-HF | VBMB2102M | IPB80N06S2L-11
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History: HYG060N08NS1P | HFP10N65U | HM75N75 | AO4932 | AP97T07AGP-HF | VBMB2102M | IPB80N06S2L-11
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