AP6A100M Datasheet. Specs and Replacement

Type Designator: AP6A100M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SO8

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AP6A100M datasheet

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AP6A100M

AP6A100M Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 60V D2 D2 Small Package Outline D1 RDS(ON) 100m D1 Surface Mount Device ID3 3.3A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description D2 D1 AP6A100 series are from Advanced Power innovated design and silicon proces... See More ⇒

Detailed specifications: AP4511GM, AP4513GM, AP4525GEM, AP4532GM, AP4533GEM, AP4578GM, AP4963GEM, AP5322GM, 8N60, AP6C036M, AP6C072M, AP8N010LM, AP9926GM, AP9936GM, AP9938GEM, AP9960GM, AP9962AGM

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