AP99LT06GS-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP99LT06GS-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 770 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
AP99LT06GS-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP99LT06GS-HF Datasheet (PDF)
ap99lt06gs-hf.pdf
AP99LT06GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAP99LT06 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap99lt06gp-hf.pdf
AP99LT06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAP99LT06 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap99lt06gi-hf.pdf
AP99LT06GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 120AG RoHS Compliant & Halogen-FreeSDescriptionAP99LT06 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
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