All MOSFET. AP9U18GH Datasheet

 

AP9U18GH Datasheet and Replacement


   Type Designator: AP9U18GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 102 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO252
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AP9U18GH Datasheet (PDF)

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AP9U18GH

AP9U18GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 20V Low On-resistance RDS(ON) 14m Low Gate Voltage Drive ID 37AGSDescriptionGThe Advanced Power MOSFETs from APEC provide the designer withDS TO-252(H)the best combination of fast switching, ruggedized device design, low

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