All MOSFET. AP9U18GH Datasheet

 

AP9U18GH MOSFET. Datasheet pdf. Equivalent

Type Designator: AP9U18GH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 37 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 102 nS

Drain-Source Capacitance (Cd): 175 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO252

AP9U18GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP9U18GH Datasheet (PDF)

1.1. ap9u18gh.pdf Size:123K _a-power

AP9U18GH
AP9U18GH

AP9U18GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 20V ▼ Low On-resistance RDS(ON) 14mΩ ▼ Low Gate Voltage Drive ID 37A G S Description G The Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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