AP9U18GH MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9U18GH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 37 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 102 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO252
AP9U18GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9U18GH Datasheet (PDF)
1.1. ap9u18gh.pdf 
Size:123K _a-power
AP9U18GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 20V ▼ Low On-resistance RDS(ON) 14mΩ ▼ Low Gate Voltage Drive ID 37A G S Description G The Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low
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