AP9U18GH Datasheet. Specs and Replacement

Type Designator: AP9U18GH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 102 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO252

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AP9U18GH datasheet

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AP9U18GH

AP9U18GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 20V Low On-resistance RDS(ON) 14m Low Gate Voltage Drive ID 37A G S Description G The Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low ... See More ⇒

Detailed specifications: AP9997GP, AP9998GI-HF, AP99LT06GI-HF, AP99LT06GP-HF, AP99LT06GS-HF, AP99T03GR-HF, AP9T15GH-HF, AP9T15GJ-HF, IRF1405, AP4410AGM-HF, AP4411GM-HF, AP4413GM-HF, AP4415GH-HF, AP4415GJ-HF, AP4424GM-HF, AP4433GH-HF, AP4433GI-HF

Keywords - AP9U18GH MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs