All MOSFET. AP9U18GH Datasheet

 

AP9U18GH MOSFET. Datasheet pdf. Equivalent

Type Designator: AP9U18GH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 37 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 102 nS

Drain-Source Capacitance (Cd): 175 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO252

AP9U18GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9U18GH Datasheet (PDF)

1.1. ap9u18gh.pdf Size:123K _a-power

AP9U18GH
AP9U18GH

AP9U18GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 20V ▼ Low On-resistance RDS(ON) 14mΩ ▼ Low Gate Voltage Drive ID 37A G S Description G The Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low

Datasheet: AP9997GP , AP9998GI-HF , AP99LT06GI-HF , AP99LT06GP-HF , AP99LT06GS-HF , AP99T03GR-HF , AP9T15GH-HF , AP9T15GJ-HF , IRF9640 , AP4410AGM-HF , AP4411GM-HF , AP4413GM-HF , AP4415GH-HF , AP4415GJ-HF , AP4424GM-HF , AP4433GH-HF , AP4433GI-HF .

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