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AP9U18GH Spec and Replacement


   Type Designator: AP9U18GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 102 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO252

 AP9U18GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9U18GH Specs

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AP9U18GH

AP9U18GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 20V Low On-resistance RDS(ON) 14m Low Gate Voltage Drive ID 37A G S Description G The Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low ... See More ⇒

Detailed specifications: AP9997GP , AP9998GI-HF , AP99LT06GI-HF , AP99LT06GP-HF , AP99LT06GS-HF , AP99T03GR-HF , AP9T15GH-HF , AP9T15GJ-HF , 20N50 , AP4410AGM-HF , AP4411GM-HF , AP4413GM-HF , AP4415GH-HF , AP4415GJ-HF , AP4424GM-HF , AP4433GH-HF , AP4433GI-HF .

History: HM90N06D | AP2222D | 3N324 | HM9435B | AP25G03GD | PJX8808 | AP45P06D

Keywords - AP9U18GH MOSFET specs

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