All MOSFET. IRFI9Z24N Datasheet

 

IRFI9Z24N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFI9Z24N

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.175 Ohm

Package: TO220

IRFI9Z24N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI9Z24N Datasheet (PDF)

1.1. irfi9z24n.pdf Size:119K _international_rectifier

IRFI9Z24N IRFI9Z24N

PD - 9.1529A IRFI9Z24N HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.175? P-Channel G Fully Avalanche Rated ID = -9.5A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

2.1. irfi9z24g-pbf.pdf Size:1485K _upd

IRFI9Z24N IRFI9Z24N

IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) - 60 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (Ω)VGS = - 10 V 0.28 RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 • P-Channel Qgs (nC) 5.4 • 175 °C Operating Temperature Qgd (nC) 11 • Dynamic dV/dt

2.2. irfi9z24g.pdf Size:169K _international_rectifier

IRFI9Z24N IRFI9Z24N

 2.3. irfi9z24gpbf.pdf Size:1774K _international_rectifier

IRFI9Z24N IRFI9Z24N

PD- 95976 IRFI9Z24GPbF • Lead-Free 12/20/04 Document Number: 91171 www.vishay.com 1 IRFI9Z24GPbF Document Number: 91171 www.vishay.com 2 IRFI9Z24GPbF Document Number: 91171 www.vishay.com 3 IRFI9Z24GPbF Document Number: 91171 www.vishay.com 4 IRFI9Z24GPbF Document Number: 91171 www.vishay.com 5 IRFI9Z24GPbF Document Number: 91171 www.vishay.com 6 IRFI9Z24GPbF Peak Diode

2.4. irfi9z24g sihfi9z24g.pdf Size:1483K _vishay

IRFI9Z24N IRFI9Z24N

IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) - 60 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = - 10 V 0.28 RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 • P-Channel Qgs (nC) 5.4 • 175 °C Operating Temperature Qgd (nC) 11 • Dynamic dV/dt Rating Configur

Datasheet: IRFI840GLC , IRFI9520N , IRFI9530G , IRFI9540N , IRFI9620G , IRFI9630G , IRFI9634G , IRFI9640G , APT50M38JFLL , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC .

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