All MOSFET. IRFIZ14A Datasheet

 

IRFIZ14A Datasheet and Replacement


   Type Designator: IRFIZ14A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO262
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IRFIZ14A Datasheet (PDF)

 ..1. Size:273K  1
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IRFIZ14A

 ..2. Size:273K  1
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IRFIZ14A

 7.1. Size:1001K  international rectifier
 irfiz14g irfiz14gpbf.pdf pdf_icon

IRFIZ14A

IRFIZ14G, SiHFIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.20RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.1 175 C Operating TemperatureQgd (nC) 5.8 Dynamic dv/dt RatingConfigur

 7.2. Size:159K  international rectifier
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IRFIZ14A

Document Number: 90224 www.vishay.com851Document Number: 90224 www.vishay.com852Document Number: 90224 www.vishay.com853Document Number: 90224 www.vishay.com854Document Number: 90224 www.vishay.com855Document Number: 90224 www.vishay.com856Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

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Datasheet: IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRF640N , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N .

History: FDMS3572 | IPI60R199CP | TPC6010-H | IRF540ZP | 2SK2208 | FTK7000 | HY1310U

Keywords - IRFIZ14A MOSFET datasheet

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