IRFIZ14A MOSFET Datasheet: N-Ch, 60V, 10A. Full specification with pinout and replacement list

IRFIZ14A Specs and Replacement

Type Designator: IRFIZ14A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 110 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO262

IRFIZ14A substitution

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IRFIZ14A datasheet

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7.1. Size:1001K international rectifier
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IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 175 C Operating Temperature Qgd (nC) 5.8 Dynamic dv/dt Rating Configur... See More ⇒

7.2. Size:159K international rectifier
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Document Number 90224 www.vishay.com 851 Document Number 90224 www.vishay.com 852 Document Number 90224 www.vishay.com 853 Document Number 90224 www.vishay.com 854 Document Number 90224 www.vishay.com 855 Document Number 90224 www.vishay.com 856 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o... See More ⇒