IRFIZ14A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFIZ14A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm
Package: I2PAK
IRFIZ14A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFIZ14A Datasheet (PDF)
3.1. irfiz14g irfiz14gpbf.pdf 
Size:1001K _international_rectifier
IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ()VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 • 175 °C Operating Temperature Qgd (nC) 5.8 • Dynamic dv/dt Rating Configur
3.2. irfiz14g.pdf Size:159K _international_rectifier
Document Number: 90224 www.vishay.com 851 Document Number: 90224 www.vishay.com 852 Document Number: 90224 www.vishay.com 853 Document Number: 90224 www.vishay.com 854 Document Number: 90224 www.vishay.com 855 Document Number: 90224 www.vishay.com 856 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of i
3.3. irfiz14g sihfiz14g.pdf Size:1000K _vishay
IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 175 C Operating Temperature Qgd (nC) 5.8 Dynamic dv/dt Rating Configuration Single
Datasheet: IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFZ46N , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N .
