All MOSFET. IRFM5210 Datasheet

 

IRFM5210 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFM5210

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 34 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180 nC

Rise Time (tr): 86 nS

Drain-Source Capacitance (Cd): 790 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO254AA

IRFM5210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFM5210 Datasheet (PDF)

1.1. irfm5210.pdf Size:15K _update

IRFM5210
IRFM5210

IRFM5210 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL MOSFET 13.59 (0.535) 6.32 (0.249) IN A TO254 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) FOR HIGH RELIABILITY APPLICATIONS. VDSS 100V 1 2 3 ID 34A Ω RDS(on) 0.07Ω 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) FEATURES 3.81 (0.150) BSC BSC • FAST SWITCHING TO-254AA •

5.1. irfm540.pdf Size:619K _update

IRFM5210
IRFM5210

N-CHANNEL POWER MOSFET IRFM540 • Low RDS(on) MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 100V VGS Gate – Source Voltage ±20V ID Tc = 25°C Continuous

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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