IXFP36N30P3 Datasheet. Specs and Replacement

Type Designator: IXFP36N30P3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 355 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO-220AB

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IXFP36N30P3 substitution

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IXFP36N30P3 datasheet

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IXFP36N30P3

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IXFP36N30P3

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 200V IXFP36N20X3M Power MOSFET ID25 = 36A RDS(on) 45m (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings G Isolated Tab D VDSS TJ = 25 C to 150 C 200 V S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V G = Gate D =... See More ⇒

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IXFP36N30P3

VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3 RDS(on) 45m IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220... See More ⇒

 7.3. Size:254K  inchange semiconductor
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IXFP36N30P3

isc N-Channel MOSFET Transistor IXFP36N20X3M FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

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Detailed specifications: IXFQ26N50P3, IXFQ24N60X, IXFQ20N50P3, IXFP8N50P3, IXFP7N60P3, IXFP5N50P3, IXFP5N100PM, IXFP4N60P3, IRLZ44N, IXFP30N60X, IXFP26N50P3, IXFP24N60X, IXFP22N65X2, IXFP20N50P3M, IXFP20N50P3, IXFP18N60X, IXFP16N60P3

Keywords - IXFP36N30P3 MOSFET specs

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