All MOSFET. IXFP36N30P3 Datasheet

 

IXFP36N30P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFP36N30P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-220AB

 IXFP36N30P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFP36N30P3 Datasheet (PDF)

 ..1. Size:155K  ixys
 ixfa36n30p3 ixfp36n30p3.pdf

IXFP36N30P3 IXFP36N30P3

Preliminary Technical InformationPolar3 TM HiPerFETTM VDSS = 300VIXFA36N30P3Power MOSFET ID25 = 36AIXFP36N30P3 RDS(on) 110m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-263AA (IXFA)GSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VTO-220AB (IXFP)VDGR TJ = 25C to 150

 7.1. Size:184K  ixys
 ixfp36n20x3m.pdf

IXFP36N30P3 IXFP36N30P3

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 200VIXFP36N20X3MPower MOSFET ID25 = 36A RDS(on) 45m (Electrically Isolated Tab)OVERMOLDEDTO-220N-Channel Enhancement ModeSymbol Test Conditions Maximum RatingsGIsolated TabDVDSS TJ = 25C to 150C 200 V SVDGR TJ = 25C to 150C, RGS = 1M 200 VG = Gate D =

 7.2. Size:310K  ixys
 ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf

IXFP36N30P3 IXFP36N30P3

VDSS = 200VX3-Class HiPERFETTM IXFY36N20X3ID25 = 36APower MOSFETIXFA36N20X3 RDS(on) 45m IXFP36N20X3N-Channel Enhancement ModeTO-252 (IXFY)G SD (Tab)TO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGSVDGR TJ = 25C to 150C, RGS = 1M 200 VD (Tab)VGSS Continuous 20 VTO-220

 7.3. Size:254K  inchange semiconductor
 ixfp36n20x3m.pdf

IXFP36N30P3 IXFP36N30P3

isc N-Channel MOSFET Transistor IXFP36N20X3MFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF640N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
Back to Top