2N7272H1 Datasheet and Replacement
Type Designator: 2N7272H1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 210(max) nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO205AF
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2N7272H1 Datasheet (PDF)
jansr2n7272.pdf

JANSR2N7272Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 100V, rDS(ON) = 0.180 The Intersil Corporation,has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre
2n7272 2n7275 2n7278 2n7281.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604Bbe completed by 30 November 2004. 30 July 2004 SUPERSEDINGMIL-PRF-19500/604A21 June 1999PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES
Datasheet: 2N7271H3 , 2N7271H4 , 2N7271R , 2N7271R1 , 2N7271R2 , 2N7271R3 , 2N7271R4 , 2N7272H , 5N50 , 2N7272H2 , 2N7272H3 , 2N7272H4 , 2N7272R , 2N7272R1 , 2N7272R2 , 2N7272R3 , 2N7272R4 .
History: IPI80N04S4L-04 | AO4264E | 2SK3538 | BSC042N03MS | STD60NF3L | NP82N06MLG | KP507A
Keywords - 2N7272H1 MOSFET datasheet
2N7272H1 cross reference
2N7272H1 equivalent finder
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History: IPI80N04S4L-04 | AO4264E | 2SK3538 | BSC042N03MS | STD60NF3L | NP82N06MLG | KP507A



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