IPB042N03L Datasheet. Specs and Replacement

Type Designator: IPB042N03L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-263

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IPB042N03L datasheet

 ..1. Size:609K  infineon
 ipb042n03l.pdf pdf_icon

IPB042N03L

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 7.1. Size:746K  infineon
 ipb042n10n3-g ipi045n10n3-g ipp045n10n3-g ipb042n10n3ge8187.pdf pdf_icon

IPB042N03L

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5?B=1... See More ⇒

 7.2. Size:976K  infineon
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IPB042N03L

IPB042N10N3 G MOSFET D PAK OptiMOS 3 Power-Transistor, 100 V Features N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectifica... See More ⇒

 7.3. Size:204K  inchange semiconductor
 ipb042n10n3g.pdf pdf_icon

IPB042N03L

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB042N10N3G FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very low on-resistence Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

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Detailed specifications: IPB05N03LA, IPB057N06N, IPB055N03L, IPB04N03LAT, IPB04N03LA, IPB04CN10NG, IPB049N08N5, IPB042N10N3GE8187, IRF520, IPB03N03LBG, IPB039N10N3GE8187, IPB034N03L, IPB031N08N5, IPB029N06N3GE8187, IPB027N10N5, IPB026N06N, IPB024N08N5

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