IPB029N06N3GE8187
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB029N06N3GE8187
Marking Code: 029N06N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 188
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 165
nC
trⓘ - Rise Time: 120
nS
Cossⓘ -
Output Capacitance: 2200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029
Ohm
Package:
TO-263
IPB029N06N3GE8187
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB029N06N3GE8187
Datasheet (PDF)
0.1. Size:996K infineon
ipb029n06n3ge8187.pdf
pe IPB029N06N3 G IPI032N06N3 GIPP032N06N3 G 3 Power-TransistorProduct SummaryV Features D R m Q #4513I CG9D389>7 1>4 CI>3 B53 , ?> =1H ,& I 1 Q ( @D9=9J54 D538>?F5BD5BC DQ H35
2.1. Size:483K infineon
ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf
Type IPB029N06N3 G IPI032N06N3 GIPP032N06N3 GOptiMOS3 Power-TransistorProduct SummaryV 60 VFeatures DSR 2.9m Ideal for high frequency switching and sync. rec. DS(on),max (SMD)I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t
3.1. Size:258K inchange semiconductor
ipb029n06n3.pdf
Isc N-Channel MOSFET Transistor IPB029N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
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