All MOSFET. IPB029N06N3GE8187 Datasheet

 

IPB029N06N3GE8187 Datasheet and Replacement


   Type Designator: IPB029N06N3GE8187
   Marking Code: 029N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 165 nC
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 2200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TO-263
 

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IPB029N06N3GE8187 Datasheet (PDF)

 0.1. Size:996K  infineon
 ipb029n06n3ge8187.pdf pdf_icon

IPB029N06N3GE8187

pe IPB029N06N3 G IPI032N06N3 GIPP032N06N3 G 3 Power-TransistorProduct SummaryV Features D R m Q #4513I CG9D389>7 1>4 CI>3 B53 , ?> =1H ,& I 1 Q ( @D9=9J54 D538>?F5BD5BC DQ H35

 2.1. Size:483K  infineon
 ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf pdf_icon

IPB029N06N3GE8187

Type IPB029N06N3 G IPI032N06N3 GIPP032N06N3 GOptiMOS3 Power-TransistorProduct SummaryV 60 VFeatures DSR 2.9m Ideal for high frequency switching and sync. rec. DS(on),max (SMD)I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t

 3.1. Size:258K  inchange semiconductor
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IPB029N06N3GE8187

Isc N-Channel MOSFET Transistor IPB029N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

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Keywords - IPB029N06N3GE8187 MOSFET datasheet

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