IPB029N06N3GE8187 PDF and Equivalents Search

 

IPB029N06N3GE8187 Specs and Replacement


   Type Designator: IPB029N06N3GE8187
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 2200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TO-263
 

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IPB029N06N3GE8187 datasheet

 0.1. Size:996K  infineon
 ipb029n06n3ge8187.pdf pdf_icon

IPB029N06N3GE8187

pe IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 3 Power-Transistor Product Summary V Features D R m Q #4513I CG9D389>7 1>4 CI>3 B53 , ?> =1H ,& I 1 Q ( @D9=9J54 D538>?F5BD5BC D Q H35... See More ⇒

 2.1. Size:483K  infineon
 ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf pdf_icon

IPB029N06N3GE8187

Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary V 60 V Features DS R 2.9 m Ideal for high frequency switching and sync. rec. DS(on),max (SMD) I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t... See More ⇒

 3.1. Size:258K  inchange semiconductor
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IPB029N06N3GE8187

Isc N-Channel MOSFET Transistor IPB029N06N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

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Detailed specifications: IPB04CN10NG , IPB049N08N5 , IPB042N10N3GE8187 , IPB042N03L , IPB03N03LBG , IPB039N10N3GE8187 , IPB034N03L , IPB031N08N5 , AOD4184A , IPB027N10N5 , IPB026N06N , IPB024N08N5 , IPB020N10N5 , IPB020N08N5 , IPB017N10N5 , IPB017N08N5 , IPB015N08N5 .

History: SKD502T

Keywords - IPB029N06N3GE8187 MOSFET specs

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