IPB029N06N3GE8187 Datasheet. Specs and Replacement

Type Designator: IPB029N06N3GE8187  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 2200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO-263

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IPB029N06N3GE8187 datasheet

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IPB029N06N3GE8187

pe IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 3 Power-Transistor Product Summary V Features D R m Q #4513I CG9D389>7 1>4 CI>3 B53 , ?> =1H ,& I 1 Q ( @D9=9J54 D538>?F5BD5BC D Q H35... See More ⇒

 2.1. Size:483K  infineon
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IPB029N06N3GE8187

Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary V 60 V Features DS R 2.9 m Ideal for high frequency switching and sync. rec. DS(on),max (SMD) I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t... See More ⇒

 3.1. Size:258K  inchange semiconductor
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IPB029N06N3GE8187

Isc N-Channel MOSFET Transistor IPB029N06N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

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Detailed specifications: IPB04CN10NG, IPB049N08N5, IPB042N10N3GE8187, IPB042N03L, IPB03N03LBG, IPB039N10N3GE8187, IPB034N03L, IPB031N08N5, 75N75, IPB027N10N5, IPB026N06N, IPB024N08N5, IPB020N10N5, IPB020N08N5, IPB017N10N5, IPB017N08N5, IPB015N08N5

Keywords - IPB029N06N3GE8187 MOSFET specs

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