IPB015N04L Datasheet. Specs and Replacement
Type Designator: IPB015N04L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 3400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO-263
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IPB015N04L substitution
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IPB015N04L datasheet
ipb015n04l.pdf
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ipb015n04l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB015N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM... See More ⇒
ipp015n04n ipb015n04n.pdf
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Detailed specifications: IPB027N10N5, IPB026N06N, IPB024N08N5, IPB020N10N5, IPB020N08N5, IPB017N10N5, IPB017N08N5, IPB015N08N5, IRF740, IPB014N06N, IPB011N04L, IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE, IPA80R1K4CE
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
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