IPB015N04L
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB015N04L
Marking Code: 015N04L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 3400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015
Ohm
Package:
TO-263
IPB015N04L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB015N04L
Datasheet (PDF)
..1. Size:440K infineon
ipb015n04l.pdf
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..3. Size:252K inchange semiconductor
ipb015n04l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB015N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
5.1. Size:670K infineon
ipp015n04n ipb015n04n.pdf
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5.2. Size:670K infineon
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5.3. Size:673K infineon
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5.4. Size:257K inchange semiconductor
ipb015n04n.pdf
Isc N-Channel MOSFET Transistor IPB015N04NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
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