FCD4N60TF Datasheet. Specs and Replacement

Type Designator: FCD4N60TF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: D-PAK

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FCD4N60TF substitution

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FCD4N60TF datasheet

 ..1. Size:478K  fairchild semi
 fcd4n60tf fcd4n60tm.pdf pdf_icon

FCD4N60TF

October 2013 FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductor s first genera- tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance ... See More ⇒

 7.1. Size:922K  fairchild semi
 fcd4n60.pdf pdf_icon

FCD4N60TF

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Detailed specifications: FCB11N60FTM, FCB11N60TM, FCB20N60FTM, FCB20N60TM, FCB290N80, FCB36N60NTM, FCD2250N80Z, FCD3400N80Z, 8205A, FCD4N60TM, FCD5N60TMWS, FCH041N60FF085, FCH041N65FF085, FCH070N60E, FCH20N60, FCH47N60F133, FCI11N60

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