FCD4N60TF Specs and Replacement
Type Designator: FCD4N60TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: D-PAK
FCD4N60TF substitution
FCD4N60TF Specs
fcd4n60tf fcd4n60tm.pdf
October 2013 FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductor s first genera- tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance ... See More ⇒
Detailed specifications: FCB11N60FTM , FCB11N60TM , FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , IRF3710 , FCD4N60TM , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , FCH20N60 , FCH47N60F133 , FCI11N60 .
History: FDMA7630
Keywords - FCD4N60TF MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDMA7630
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