All MOSFET. FCD4N60TF Datasheet

 

FCD4N60TF MOSFET. Datasheet pdf. Equivalent

Type Designator: FCD4N60TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 210 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: D-PAK

FCD4N60TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD4N60TF Datasheet (PDF)

1.1. fcd4n60tf fcd4n60tm.pdf Size:478K _fairchild_semi

FCD4N60TF
FCD4N60TF

October 2013 FCD4N60 N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2  Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 1.0  utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance

3.1. fcd4n60.pdf Size:922K _fairchild_semi

FCD4N60TF
FCD4N60TF

December 2008 TM SuperFET FCD4N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 1.0Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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